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| CYStech Electronics Corp. NPN Epitaxial Planar Transistor Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date : Page No. : 1/4 BTD1980J3 Description The BTD1980J3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Equivalent Circuit BTD1980J3 B C Outline TO-252 E BBase CCollector EEmitter BCE Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : Single Pulse Pw350s, Duty2%. Symbol VCBO VCEO VEBO IC ICP Pd(TA=25) Pd(TC=25) RJA RJC Tj Tstg Limits 130 120 5 4 6 (Note ) 1.5 20 83.3 6.25 150 -55~+150 Unit V V V A A W W C/W C/W C C BTD1980J3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Symbol BVCEO BVCBO ICBO ICEO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 Cob Min. 120 130 1000 500 Typ. Max. 1 2 2 2.5 2.8 200 Unit V V mA mA mA V V pF Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date : Page No. : 2/4 Test Conditions IC=1mA, IB=0 IC=100A, IE=0 VCB=100V, IE=0 VCE=50V, IE=0 VEB=5V, IC=0 IC=2A, IB=8mA VCE=4V, IC=2A VCE=4V, IC=1A VCE=4V, IC=2A VCB=10V, IE=0A, f=1MHz *Pulse Test : Pulse Width 380s, Duty Cycle2% BTD1980J3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 10000 Saturation Voltage---(mV) VCE = 4V 10000 Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current Current Gain---HFE 1000 100 1000 10 1 1 10 100 1000 10000 100 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage vs Collector Current 10000 Saturation Voltage---(mV) VBE (SAT)@IC = 250IB 1000 On voltage---(mV) 10000 Collector Current---IC(mA) On voltage vs Collector Current VBE (ON) @VCE = 4V 1000 100 10 1 10 100 1000 10000 Collector Current---IC(mA) 100 1 10 100 1000 10000 Collector Current---IC(mA) Power Derating Curve 1.75 Power Dissipation---PD(W) Power Dissipation---PD(W) Power Derating Curve 25 20 15 10 5 0 1.5 1.25 1 0.75 0.5 0.25 0 0 50 100 150 Ambient Temperature---TA() 200 0 50 100 150 Case Temperature---TC() 200 BTD1980J3 CYStek Product Specification CYStech Electronics Corp. TO-252 Dimension A C Spec. No. : C654J3 Issued Date : 2004.03.18 Revised Date : Page No. : 4/4 Marking: B L F G D D1980 3 H E K 2 I 1 J Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2520 0.2677 0.2125 0.2283 Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.40 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0354 0.0315 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 0.90 0.80 5.20 5.50 1.40 1.60 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD1980J3 CYStek Product Specification |
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